Component information

BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 45µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Series
OptiMOS™
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 75 V
Part Status
Active
Power Dissipation (Max)
74W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
150 V
Supplier Device Package
PG-TDSON-8-1
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Base Product Number
BSC360
Rds On (Max) @ Id, Vgs
36mOhm @ 25A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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