Component information
BSD235NH6327XTSA1
BSD235NH6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.2V @ 1.6µA
- Manufacturer
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 0.32nC @ 4.5V
- Series
- OptiMOS™ 2
- Input Capacitance (Ciss) (Max) @ Vds
- 63pF @ 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 500mW
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20V
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Current - Continuous Drain (Id) @ 25°C
- 950mA
- Supplier Device Package
- PG-SOT363-PO
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 950mA, 4.5V
- Base Product Number
- BSD235
Documentation and references
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