Component information
BSG0811NDATMA1
BSG0811NDATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 20A, 10V
- Manufacturer
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Series
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 8.4nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 12V
- Part Status
- Active
- Power - Max
- 2.5W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual) Asymmetrical
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate, 4.5V Drive
- Package / Case
- 8-PowerTDFN
- Drain to Source Voltage (Vdss)
- 25V
- Supplier Device Package
- PG-TISON-8
- Current - Continuous Drain (Id) @ 25°C
- 19A, 41A
- Base Product Number
- BSG0811
Documentation and references
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