BSG0812NDATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™ 5

Part Status

Active

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 10V, 0.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V, 29nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 12V, 3700pF @ 12V

Power - Max

2.5W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel (Dual) Asymmetrical

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 37A (Ta)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TISON-8-4

Packaging

Tape & Reel (TR); Cut Tape (CT)