Component information
BSH103BKR
BSH103BKR component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 1A, 4.5V
- Mfr
- Nexperia USA Inc.
- Vgs(th) (Max) @ Id
- 1.25V @ 250µA
- Series
- TrenchMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 1.2 nC @ 4.5 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±12V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 79.3 pF @ 15 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 330mW (Ta), 2.1W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 30 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Supplier Device Package
- TO-236AB
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ