Component information
BSH205G2AR
BSH205G2AR component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 7 nC @ 4.5 V
- Mfr
- Nexperia USA Inc.
- Vgs (Max)
- ±8V
- Series
- TrenchMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 421 pF @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power Dissipation (Max)
- 610mW (Ta), 10W (Tc)
- Part Status
- Active
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- P-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 2.6A (Ta)
- Supplier Device Package
- TO-236AB
- Rds On (Max) @ Id, Vgs
- 118mOhm @ 2.6A, 4.5V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Base Product Number
- BSH205
Documentation and references
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