Component information
BSM120D12P2C005
Rohm Semiconductor BSM120D12P2C005: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.7V @ 22mA
- Input Capacitance (Ciss) (Max) @ Vds
- 14000pF @ 10V
- Power - Max
- 780W
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Bulk
- Base Product Number
- BSM120
Documentation and references
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