Component information
BSM180D12P2E002
Rohm Semiconductor BSM180D12P2E002: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 35.2mA
- Input Capacitance (Ciss) (Max) @ Vds
- 18000pF @ 10V
- Power - Max
- 1360W (Tc)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 204A (Tc)
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Bulk
- Base Product Number
- BSM180
Documentation and references
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