Component information
BSM180D12P3C007
Rohm Semiconductor BSM180D12P3C007: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 5.6V @ 50mA
- Input Capacitance (Ciss) (Max) @ Vds
- 900pF @ 10V
- Power - Max
- 880W
- Operating Temperature
- 175°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Bulk
- Base Product Number
- BSM180
Documentation and references
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