Component information
BSM75GB170DN2HOSA1
Infineon Technologies BSM75GB170DN2HOSA1: IGBT Modules. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Input Capacitance (Cies) @ Vce
- 11 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- No
- Operating Temperature
- 150°C (TJ)
- Configuration
- Half Bridge
- Voltage - Collector Emitter Breakdown (Max)
- 1700 V
- Current - Collector (Ic) (Max)
- 110 A
- Power - Max
- 625 W
- Vce(on) (Max) @ Vge, Ic
- 3.9V @ 15V, 75A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- BSM75G
Documentation and references
Documentation can be discussed with your inquiry.
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