Component information
BSO615NGXUMA1
BSO615NGXUMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 2V @ 20µA
- Manufacturer
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Series
- SIPMOS®
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 25V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Power - Max
- 2W (Ta)
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 60V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C
- 2.6A
- Supplier Device Package
- PG-DSO-8
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 2.6A, 4.5V
- Base Product Number
- BSO615
Documentation and references
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