Component information
BSP135H6327XTSA1
BSP135H6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 4.9 nC @ 5 V
- Mfr
- Infineon Technologies
- Vgs (Max)
- ±20V
- Series
- SIPMOS®
- Input Capacitance (Ciss) (Max) @ Vds
- 146 pF @ 25 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power Dissipation (Max)
- 1.8W (Ta)
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- FET Type
- N-Channel, Depletion Mode
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 600 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 120mA (Ta)
- Supplier Device Package
- PG-SOT223-4
- Drive Voltage (Max Rds On, Min Rds On)
- 0V, 10V
- Package / Case
- TO-261-4, TO-261AA
- Rds On (Max) @ Id, Vgs
- 45Ohm @ 120mA, 10V
- Base Product Number
- BSP135
- Vgs(th) (Max) @ Id
- 1V @ 94µA
Documentation and references
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