BSP135IXTSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 94µA

Gate Charge (Qg) (Max) @ Vgs

3.7 nC @ 5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

98 pF @ 25 V

FET Type

N-Channel, Depletion Mode

Power Dissipation (Max)

1.8W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

120mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

45Ohm @ 120mA, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Packaging

Tape & Reel (TR); Cut Tape (CT)