Component information
BSP62H6327XTSA1
BSP62H6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 2000 @ 500mA, 10V
- Mfr
- Infineon Technologies
- Power - Max
- 1.5 W
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 200MHz
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP - Darlington
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 1 A
- Package / Case
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Supplier Device Package
- PG-SOT223-4
- Vce Saturation (Max) @ Ib, Ic
- 1.8V @ 1mA, 1A
- Base Product Number
- BSP62
- Current - Collector Cutoff (Max)
- 10µA
Documentation and references
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