BSS123IXTSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Active

Rds On (Max) @ Id, Vgs

6Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 13µA

Gate Charge (Qg) (Max) @ Vgs

0.63 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

500mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR); Cut Tape (CT)