Component information

BSS127IXTSA1

BSS127IXTSA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.6V @ 8µA
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
0.65 nC @ 10 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
500mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
21mA (Ta)
Supplier Device Package
PG-SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs
500Ohm @ 16mA, 10V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number