Component information
BSS159NH6327XTSA1
BSS159NH6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.4V @ 26µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 2.9 nC @ 5 V
- Series
- SIPMOS®
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 44 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 360mW (Ta)
- FET Type
- N-Channel, Depletion Mode
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 60 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 230mA (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 0V, 10V
- Supplier Device Package
- PG-SOT23
- Rds On (Max) @ Id, Vgs
- 3.5Ohm @ 160mA, 10V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
Documentation and references
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