Component information
BSS169IXTSA1
BSS169IXTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 1.8V @ 50µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 2.1 nC @ 7 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 51 pF @ 25 V
- FET Type
- N-Channel, Depletion Mode
- Power Dissipation (Max)
- 360mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 190mA (Ta)
- Supplier Device Package
- PG-SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On)
- 0V, 10V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Rds On (Max) @ Id, Vgs
- 12Ohm @ 50mA, 0V
Documentation and references
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