BSS670T116

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Rds On (Max) @ Id, Vgs

680mOhm @ 650mA, 10V

Vgs(th) (Max) @ Id

2V @ 10µA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

47 pF @ 30 V

FET Type

N-Channel

Power Dissipation (Max)

200mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

650mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

SST3

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR); Cut Tape (CT)