Component information

BSS84Q-13-F

BSS84Q-13-F component information and product attributes.

Product information

Manufacturer
Diodes Incorporated
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V
Mfr
Diodes Incorporated
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
300mW (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Drain to Source Voltage (Vdss)
50 V
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
5V
Supplier Device Package
SOT-23-3
Rds On (Max) @ Id, Vgs
10Ohm @ 100mA, 5V
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
2V @ 1mA
Base Product Number
BSS84

Documentation and references

Reference document ↗

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