Component information
BST91B1P4K01-VC
Rohm Semiconductor BST91B1P4K01-VC: FET, MOSFET Arrays. Package / Case: 20-PowerDIP Module (1.508", 38.30mm). Supplier Device Package: 20-HSDIP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.8V @ 30.8mA
- Gate Charge (Qg) (Max) @ Vgs
- 170nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 4580pF @ 500V
- Power - Max
- 385W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C
- Configuration
- 4 N-Channel (Full Bridge)
- Drain to Source Voltage (Vdss)
- 750V
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 91A, 18V
- Mounting Type
- Through Hole
- Package / Case
- 20-PowerDIP Module (1.508", 38.30mm)
- Supplier Device Package
- 20-HSDIP
- Packaging
- Box
Documentation and references
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