Component information
BSZ014NE2LS5IFATMA1
BSZ014NE2LS5IFATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 33 nC @ 10 V
- Series
- OptiMOS™
- Vgs (Max)
- ±16V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 2300 pF @ 12 V
- Part Status
- Active
- FET Feature
- Schottky Diode (Body)
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.1W (Ta), 69W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 25 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 31A (Ta), 40A (Tc)
- Supplier Device Package
- PG-TSDSON-8-FL
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs
- 1.45mOhm @ 20A, 10V
- Base Product Number
- BSZ014
Documentation and references
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