Component information
BSZ15DC02KDHXTMA1
Infineon Technologies BSZ15DC02KDHXTMA1: FET, MOSFET Arrays. Package / Case: 8-PowerTDFN. Supplier Device Package: PG-TSDSON-8-FL.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- HEXFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs
- 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- 419pF @ 10V
- Power - Max
- 2.5W
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- N and P-Channel Complementary
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 5.1A, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- PG-TSDSON-8-FL
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BSZ15DC02
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ