Component information
BUL45D2G
BUL45D2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10 @ 2A, 1V
- Mfr
- onsemi
- Power - Max
- 75 W
- Packaging
- Tube
- Frequency - Transition
- 13MHz
- Part Status
- Obsolete
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 5 A
- Package / Case
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max)
- 400 V
- Supplier Device Package
- TO-220
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 400mA, 2A
- Base Product Number
- BUL45
- Current - Collector Cutoff (Max)
- 100µA
Documentation and references
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