CSD13302W

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Texas Instruments

Series

NexFET™

Part Status

Active

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8 nC @ 4.5 V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

862 pF @ 6 V

Power Dissipation (Max)

1.8W (Ta)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12 V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

17.1mOhm @ 1A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

4-DSBGA (1x1)

Package / Case

4-UFBGA, DSBGA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

CSD13302