Component information

CSD17556Q5B

CSD17556Q5B component information and product attributes.

Product information

Manufacturer
Texas Instruments
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1.65V @ 250µA
Mfr
Texas Instruments
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 4.5 V
Series
NexFET™
Vgs (Max)
±20V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
7020 pF @ 15 V
Part Status
Active
Power Dissipation (Max)
3.1W (Ta), 191W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
8-VSON-CLIP (5x6)
Current - Continuous Drain (Id) @ 25°C
34A (Ta), 100A (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
CSD17556
Rds On (Max) @ Id, Vgs
1.4mOhm @ 40A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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