CSD18510KCS

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Texas Instruments

Series

NexFET™

Part Status

Active

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11400 pF @ 20 V

Power Dissipation (Max)

250W (Ta)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 100A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Packaging

Tube

Base Product Number

CSD18510