CSD19532Q5B

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Texas Instruments

Series

NexFET™

Part Status

Active

Vgs(th) (Max) @ Id

3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4810 pF @ 50 V

Power Dissipation (Max)

3.1W (Ta), 195W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 17A, 10V

Mounting Type

Surface Mount

Supplier Device Package

8-VSON-CLIP (5x6)

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

CSD19532