Component information

CSD22206W

CSD22206W component information and product attributes.

Product information

Manufacturer
Texas Instruments
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1.05V @ 250µA
Mfr
Texas Instruments
Gate Charge (Qg) (Max) @ Vgs
14.6 nC @ 4.5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
-6V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2275 pF @ 4 V
FET Type
P-Channel
Power Dissipation (Max)
1.7W (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
8 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Supplier Device Package
9-DSBGA
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package / Case
9-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs
5.7mOhm @ 2A, 4.5V
Base Product Number
CSD22206

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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