Component information
CSD25213W10
CSD25213W10 component information and product attributes.
Product information
- Manufacturer
- Texas Instruments
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Mfr
- Texas Instruments
- Gate Charge (Qg) (Max) @ Vgs
- 2.9 nC @ 4.5 V
- Series
- NexFET™
- Vgs (Max)
- -6V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 478 pF @ 10 V
- Part Status
- Active
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20 V
- Supplier Device Package
- 4-DSBGA (1x1)
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Ta)
- Package / Case
- 4-UFBGA, DSBGA
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Base Product Number
- CSD25213
- Rds On (Max) @ Id, Vgs
- 47mOhm @ 1A, 4.5V
Documentation and references
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