CSD25402Q3AT

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Texas Instruments

Series

NexFET™

Part Status

Active

Vgs(th) (Max) @ Id

1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.7 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1790 pF @ 10 V

Power Dissipation (Max)

2.8W (Ta), 69W (Tc)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 10A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (3x3.3)

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

CSD25402Q3