Component information
CSD85312Q3E
CSD85312Q3E component information and product attributes.
Product information
- Manufacturer
- Texas Instruments
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 12.4mOhm @ 10A, 8V
- Manufacturer
- Texas Instruments
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Series
- NexFET™
- Gate Charge (Qg) (Max) @ Vgs
- 15.2nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 2390pF @ 10V
- Part Status
- Active
- Power - Max
- 2.5W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual) Common Source
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate, 5V Drive
- Package / Case
- 8-PowerVDFN
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- 8-VSON (3.3x3.3)
- Current - Continuous Drain (Id) @ 25°C
- 39A
- Base Product Number
- CSD85312
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ