CSD86336Q3D

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Texas Instruments

Series

NexFET™

Part Status

Active

Rds On (Max) @ Id, Vgs

9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

1.9V @ 250µA, 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.8nC @ 45V, 7.4nC @ 45V

Input Capacitance (Ciss) (Max) @ Vds

494pF @ 12.5V, 970pF @ 12.5V

Power - Max

6W

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 125°C

Configuration

2 N-Channel (Half Bridge)

FET Feature

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-VSON (3.3x3.3)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

CSD86336Q3