CSD87312Q3E

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Texas Instruments

Series

NexFET™

Part Status

Active

Rds On (Max) @ Id, Vgs

33mOhm @ 7A , 8V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 15V

Power - Max

2.5W

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel (Dual) Common Source

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-VSON (3.3x3.3)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

CSD87312Q3