Component information
DF650R17IE4BOSA1
Infineon Technologies DF650R17IE4BOSA1: IGBT Modules. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Series
- PrimePACK™2
- Part Status
- Not For New Designs
- Current - Collector Cutoff (Max)
- 5 mA
- Input Capacitance (Cies) @ Vce
- 54 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- Yes
- Operating Temperature
- -40°C ~ 150°C
- Configuration
- Single
- Voltage - Collector Emitter Breakdown (Max)
- 1700 V
- Current - Collector (Ic) (Max)
- 930 A
- Power - Max
- 4150 W
- Vce(on) (Max) @ Vge, Ic
- 2.45V @ 15V, 650A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- DF650R17
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ