Component information
DF80R12W2H3B11BOMA1
Infineon Technologies DF80R12W2H3B11BOMA1: IGBT Modules. Package / Case: Module. Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Vce(on) (Max) @ Vge, Ic
- 1.7V @ 15V, 20A
- Current - Collector Cutoff (Max)
- 1 mA
- Input Capacitance (Cies) @ Vce
- 2.35 nF @ 25 V
- Input
- Standard
- Configuration
- Dual Boost Chopper
- NTC Thermistor
- Yes
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 50 A
- Power - Max
- 190 W
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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