Component information
DMG6602SVT-7
Diodes Incorporated DMG6602SVT-7: FET, MOSFET Arrays. Package / Case: SOT-23-6 Thin, TSOT-23-6. Supplier Device Package: TSOT-26.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Not For New Designs
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 15V
- Power - Max
- 840mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- N and P-Channel
- FET Feature
- Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 3.1A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- TSOT-26
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMG6602
Documentation and references
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