Component information

DMG9926USD-13

DMG9926USD-13 component information and product attributes.

Product information

Manufacturer
Diodes Incorporated
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Vgs(th) (Max) @ Id
900mV @ 250µA
Manufacturer
Diodes Incorporated
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 4.5V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
867pF @ 15V
Part Status
Active
Power - Max
1.3W
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
20V
Supplier Device Package
8-SO
Current - Continuous Drain (Id) @ 25°C
8A
Base Product Number
DMG9926
Rds On (Max) @ Id, Vgs
24mOhm @ 8.2A, 4.5V

Documentation and references

Reference document ↗

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