Component information
DMN1032UCB4-7
DMN1032UCB4-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Mfr
- Diodes Incorporated
- Gate Charge (Qg) (Max) @ Vgs
- 4.5 nC @ 4.5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±8V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 450 pF @ 6 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 900mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 12 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 4.8A (Ta)
- Supplier Device Package
- U-WLB1010-4
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Package / Case
- 4-UFBGA, WLBGA
- Rds On (Max) @ Id, Vgs
- 26mOhm @ 1A, 4.5V
- Base Product Number
- DMN1032
Documentation and references
Documentation can be discussed with your inquiry.
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