Component information
DMN10H120SFG-7
Diodes Incorporated DMN10H120SFG-7: Single FETs, MOSFETs. Package / Case: 8-PowerVDFN. Supplier Device Package: POWERDI3333-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 10.6 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 549 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 1W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 3.3A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- POWERDI3333-8
- Package / Case
- 8-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN10
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ