Component information
DMN10H220LDV-13
Diodes Incorporated DMN10H220LDV-13: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PowerDI3333-8 (Type UXC).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 366pF @ 50V
- Power - Max
- 1.8W (Ta), 40W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Tc)
- Rds On (Max) @ Id, Vgs
- 222mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Supplier Device Package
- PowerDI3333-8 (Type UXC)
- Base Product Number
- DMN10
Documentation and references
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