Component information
DMN10H6D2LFDB-13
Diodes Incorporated DMN10H6D2LFDB-13: FET, MOSFET Arrays. Package / Case: 6-UDFN Exposed Pad. Supplier Device Package: U-DFN2020-6 (Type B).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 41pF @ 50V
- Power - Max
- 700mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 270mA (Ta)
- Rds On (Max) @ Id, Vgs
- 6Ohm @ 190mA, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- U-DFN2020-6 (Type B)
- Packaging
- Tape & Reel (TR)
- Base Product Number
- DMN10
Documentation and references
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