Component information
DMN2005UFG-7
Diodes Incorporated DMN2005UFG-7: Single FETs, MOSFETs. Package / Case: 8-PowerVDFN. Supplier Device Package: POWERDI3333-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 164 nC @ 10 V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 6495 pF @ 10 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 1.05W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 18.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs
- 4.6mOhm @ 13.5A, 4.5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- POWERDI3333-8
- Package / Case
- 8-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN2005
Documentation and references
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