Component information
DMN2013UFX-7
DMN2013UFX-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Gate Charge (Qg) (Max) @ Vgs
- 57.4nC @ 8V
- Manufacturer
- Diodes Incorporated
- Input Capacitance (Ciss) (Max) @ Vds
- 2607pF @ 10V
- Packaging
- Tape & Reel (TR)
- Power - Max
- 2.14W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual) Common Drain
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 20V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta)
- Package / Case
- 6-VFDFN Exposed Pad
- Rds On (Max) @ Id, Vgs
- 11.5mOhm @ 8.5A, 4.5V
- Supplier Device Package
- W-DFN5020-6
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Base Product Number
- DMN2013
Documentation and references
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