Component information
DMN2014LHAB-13
Diodes Incorporated DMN2014LHAB-13: FET, MOSFET Arrays. Package / Case: 6-UFDFN Exposed Pad. Supplier Device Package: U-DFN2030-6 (Type B).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- 1550pF @ 10V
- Power - Max
- 800mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 4A, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFDFN Exposed Pad
- Supplier Device Package
- U-DFN2030-6 (Type B)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN2014
Documentation and references
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