Component information
DMN2016LHAB-7
DMN2016LHAB-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Manufacturer
- Diodes Incorporated
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1550pF @ 10V
- Part Status
- Active
- Power - Max
- 1.2W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual) Common Drain
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 6-UDFN Exposed Pad
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- U-DFN2030-6 (Type B)
- Current - Continuous Drain (Id) @ 25°C
- 7.5A
- Base Product Number
- DMN2016
- Rds On (Max) @ Id, Vgs
- 15.5mOhm @ 4A, 4.5V
Documentation and references
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