Component information
DMN2019UTS-13
DMN2019UTS-13 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Manufacturer
- Diodes Incorporated
- Gate Charge (Qg) (Max) @ Vgs
- 8.8nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 143pF @ 10V
- Part Status
- Active
- Power - Max
- 780mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual) Common Drain
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- 8-TSSOP
- Current - Continuous Drain (Id) @ 25°C
- 5.4A
- Base Product Number
- DMN2019
- Rds On (Max) @ Id, Vgs
- 18.5mOhm @ 7A, 10V
Documentation and references
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