Component information
DMN2029USD-13
Diodes Incorporated DMN2029USD-13: FET, MOSFET Arrays. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SO.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 18.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1171pF @ 10V
- Power - Max
- 1.2W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 5.8A
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 6.5A, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN2029
Documentation and references
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