Component information
DMN2300UFB4-7B
Diodes Incorporated DMN2300UFB4-7B: Single FETs, MOSFETs. Package / Case: 3-XFDFN. Supplier Device Package: X2-DFN1006-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 1.6 nC @ 4.5 V
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 64.3 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 500mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs
- 175mOhm @ 300mA, 4.5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- X2-DFN1006-3
- Package / Case
- 3-XFDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN2300
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ