Component information
DMN3035LWN-7
Diodes Incorporated DMN3035LWN-7: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: V-DFN3020-8 (Type N).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 9.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 399pF @ 15V
- Power - Max
- 770mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 5.5A
- Rds On (Max) @ Id, Vgs
- 35mOhm @ 4.8A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Supplier Device Package
- V-DFN3020-8 (Type N)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN3035
Documentation and references
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